Thermic Edge designs and manufactures CVD systems for chemical vapour deposition processes, including high purity silicon carbide coating applications for graphite, ceramic and composite components. Our hot wall CVD reactors are engineered for controlled gas delivery, thermal uniformity, repeatable coating thickness and reliable operation in demanding production environments.
As a specialist manufacturer of CVD coating equipment, Thermic Edge supports customers who require precise deposition, contamination control, scalable chamber sizes and process led equipment design. Each CVD coating machine can be configured around the application, substrate type, chamber size and production requirements.
The SiC3 CVD reactor has been engineered to support high volume production environments, making it well suited to semiconductor applications where throughput, repeatability and contamination control are critical. With controlled gas flow, robust thermal uniformity and precise process management, the reactor helps deliver consistent, high purity CVD coatings across large batches of components.
Whether coating complex graphite substrates, porous ceramics or composite components, the SiC3 reactor supports reliable, scalable production for demanding process hardware. Thermic Edge can also assist with component preparation, coating requirements and post process considerations, helping customers develop a complete solution around their application.
With more than a decade of continuous operation of its own SiC3 CVD reactor, Thermic Edge brings practical, hands on process experience to the design, optimisation and maintenance of CVD systems. This experience informs the development of each system, supporting reliability, ease of use and performance in real production environments.
For customers comparing CVD machines, CVD furnaces and wider chemical vapour deposition systems, Thermic Edge can provide a clear technical discussion around chamber design, heating method, gas delivery, process control and coating performance.
| Parameter | Specification |
|---|---|
| Reactor Type | Hot wall, vertical CVD reactor |
| System Type | CVD system, CVD coating equipment and configurable CVD furnace |
| Process Chambers | Single or dual process chambers, configurable per production requirements |
| Heating Method | Resistive heating or induction heating options available, depending on application and power limitations at the site of installation |
| Chamber Wall Material | 316L stainless steel |
| Coating Material | Cubic silicon carbide, also known as β-SiC |
| Deposition Process | LPCVD or Atmospheric CVD, also known as APCVD, customisable depending on process requirements |
| Typical Coating Thickness | 80 to 100 µm, variable up to 200 µm upon request |
| Thickness Uniformity | ±10 µm on 100 µm layer, targeting ±5 µm in development |
| Growth Rate | 50 to 60 µm per hour |
| Surface Roughness | Adjustable, with Ra tailored to application requirements |
| Coating Purity | Ultra high purity, low nitrogen absorption, with nitrogen free option available |
| Substrate Types | Graphite, porous ceramics and composites |
| Geometry Capability | High conformity on complex 3D shapes and blind holes, including Ø1 mm x 5 mm geometries |
| Chamber Size, Processing Zone | Ø300 mm x 450 mm height, Ø1000 mm x 1500 mm, Ø1500 mm x 2000 mm |
| Rotational Base | Included for maximised uniformity of deposition |
| Loading Mechanism | Motorised chamber lift system for vertical loading |
| Max Substrate Temperature | Up to 1400°C, depending on process and materials |
| Process Gases | SiCl₄, CH₄, H₂ and Ar, with high purity MFC controlled delivery and mixing via Coriolis before distribution to the reactor |
| Carrier Gas Control | Multi zone gas injection with precision MFC regulation |
| Automation and Interface | PLC based control, with optional SECS/GEM automation interface |
| Process Repeatability | < 2% variation across batch under standardised conditions |
| System Footprint | Modular, optimised for cleanroom integration and scalability |
Thermic Edge also designs and manufactures related vacuum furnaces, graphite furnaces and ceramic coatings for demanding high temperature and vacuum process environments.
CVD applications vary widely across semiconductor, research and industrial production environments. Thermic Edge CVD systems are designed for high purity silicon carbide coatings where component stability, contamination control and repeatable coating performance are essential.
The SiC3 CVD coating process is particularly suited to graphite, porous ceramic and composite components used in demanding thermal and process conditions. By applying a dense cubic silicon carbide coating, the system can help improve surface protection, chemical resistance and component suitability for controlled production environments.
Thermic Edge CVD coating equipment can be configured for LPCVD or Atmospheric CVD, also known as APCVD, depending on the coating process, substrate geometry, chamber size and production requirements. These options allow the CVD machine to be tailored to the intended coating method rather than supplied as a fixed standard package.
For customers looking for a small semiconductor CVD machine or a larger production scale CVD furnace, Thermic Edge can discuss processing zone dimensions, heating method, gas flow control and loading requirements at the start of the enquiry.
To discuss a specific CVD coating requirement, contact Thermic Edge through the contact page or email sales@thermic-edge.com.
This table shows the measured properties of the SiC3 coating used in Thermic Edge CVD coating applications.
Impurity testing was carried out by EAG Laboratories using Glow Discharge Mass Spectroscopy. The values shown below help demonstrate the suitability of the coating for high purity CVD applications, including semiconductor and advanced material processing environments.
| Property | Value |
|---|---|
| Density | 3200 kg/m3 |
| Crystal Structure | 3C, cubic β structure |
| Porosity | 0%, helium leak tight |
| Crystal Size | 1 to 5 μm |
| Appearance | Grey, satin to dull |
| Thermal Expansion, RT to 400°C | 4.2 x 10-6 m/K |
| Thermal Conductivity at 20°C | 200 W/m·K |
| Elastic Modulus | 450 GPa |
| Electrical Resistivity at 20°C | 1 MΩ·m |
The following impurity levels were measured with GDMS, 5 μm deep into the SiC coating. Low impurity levels are important for CVD coatings used in semiconductor and high purity process applications.
| Element | TEC | C1 | C2 |
|---|---|---|---|
| Sodium | < 0.01 | 0.31 | 0.34 |
| Magnesium | < 0.01 | 0.06 | 0.13 |
| Aluminium | < 0.02 | 3.2 | 1.1 |
| Potassium | < 0.5 | < 0.5 | < 0.5 |
| Calcium | < 0.05 | 0.62 | 0.62 |
| Titanium | < 0.005 | 0.25 | 0.14 |
| Vanadium | < 0.005 | < 0.005 | < 0.005 |
| Chromium | < 0.3 | 0.96 | < 0.3 |
| Iron | < 0.04 | 4.1 | 0.55 |
| Cobalt | < 0.05 | < 0.05 | < 0.05 |
| Nickel | < 0.05 | 1.1 | < 0.05 |
| Molybdenum | < 0.05 | 0.08 | < 0.05 |
| Tin | < 0.05 | < 0.05 | < 0.05 |
| Tungsten | < 0.01 | 0.69 | 1.1 |
Measured with GDMS, 5 μm deep into SiC coating.
A CVD system is used to deposit high purity coatings onto a substrate through controlled chemical reactions inside a heated process chamber. Thermic Edge CVD systems are designed for silicon carbide coating applications, including semiconductor process components, graphite parts, ceramics and composite materials.
A CVD furnace is one type of CVD coating machine. It provides the controlled heating environment required for chemical vapour deposition, while the wider system may also include gas delivery, process control, chamber loading, automation and exhaust management.
Thermic Edge CVD systems can support high purity silicon carbide coating applications for semiconductor production, advanced materials processing, graphite component protection, ceramic coating and other demanding industrial environments.
Thermic Edge CVD systems can be configured for LPCVD or Atmospheric CVD, also known as APCVD, depending on the coating material, chamber size, substrate geometry and production needs.
Thermic Edge can discuss compact and larger scale CVD machine requirements depending on processing zone size, loading method, coating process and production needs. Available chamber options include smaller processing zones as well as larger CVD furnace configurations for higher volume coating work.
SiC CVD coating can provide a dense, high purity and conformal protective layer for graphite, ceramic and composite components. This makes it useful for demanding environments where cleanliness, temperature resistance and coating consistency are important.
For more information, view Thermic Edge’s ceramic coatings or speak to the team through the contact page.
To discuss a CVD system, CVD furnace or silicon carbide coating application, please complete the form below. The more detail you can provide about substrate material, chamber size, coating thickness, process requirements and production volume, the easier it will be for Thermic Edge to advise on a suitable system.
Thermic Edge Ltd proudly introduces the SiC3 CVD Reactor, an advanced Chemical Vapor Deposition system purpose-built to deliver our unique SiC3 cubic silicon carbide coatings. Developed exclusively by Thermic Edge, SiC3 combines a well-defined crystal structure, isotropic growth, and high-density layering—pushing the boundaries of material protection and purity for critical applications.
Key Features
| Parameter | Specification |
|---|---|
| Reactor Type | Hot Wall, Vertical CVD Reactor |
| Process Chambers | Single or Dual Process Chambers (configurable per production requirements) |
| Heating Method | Resistive Heating or Induction Heating options available depending on application and power limitations at site of installation |
| Chamber Wall Material | 316L Stainless Steel |
| Coating Material | Cubic Silicon Carbide (β-SiC) |
| Deposition Process | LPCVD or Atmospheric CVD (customizable) |
| Typical Coating Thickness | 80–100 µm (variable up to 200 µm upon request) |
| Thickness Uniformity | ±10 µm on 100 µm layer (targeting ±5 µm in development) |
| Growth Rate | 50–60 µm per hour |
| Surface Roughness | Adjustable (Ra tailored to application requirements) |
| Coating Purity | Ultra-high purity; low nitrogen absorption; nitrogen-free option available |
| Substrate Types | Graphite, Porous Ceramics, Composites |
| Geometry Capability | High conformity on complex 3D shapes and blind holes (Ø1mm × 5mm) |
| Chamber Size (Processing Zone) | Ø300 mm × 450 mm height, Ø1000mm x 1500mm, Ø1500mm x 2000mm |
| Rotational Base | Included for maximised uniformity of deposition |
| Loading Mechanism | Motorised chamber lift system for vertical loading |
| Max Substrate Temperature | Up to 1400 °C (depending on process and materials) |
| Process Gases | SiCl₄, CH₄, H₂, Ar (with high-purity MFC-controlled delivery and mixing via Coriolis before distribution to reactor) |
| Carrier Gas Control | Multi-zone gas injection with precision MFC regulation |
| Automation & Interface | PLC-based control; optional SECS/GEM automation interface |
| Process Repeatability | <2% variation across batch under standardised conditions |
| System Footprint | Modular; optimized for cleanroom integration and scalability |
This table shows the impurities of SiC³ coating.
Lowest limit of detection with this method. Testing carried out by EAG Laboratories using Glow Discharge Mass Spectroscopy.
| Property | Value |
|---|---|
| Density | 3200 kg/m3 |
| Crystal Structure | 3C (cubic; β) |
| Porosity | 0% (helium leak tight) |
| Crystal Size | 1 – 5 μm |
| Appearance | Grey, satin to dull |
| Thermal Expansion (RT–400°C) | 4.2 x 10-6 m/K |
| Thermal Conductivity (@ 20°C) | 200 W/m·K |
| Elastic Modulus | 450 GPa |
| Electrical Resistivity (@ 20°C) | 1 MΩ·m |
| Element | TEC | C1 | C2 |
|---|---|---|---|
| Sodium | < 0.01 | 0.31 | 0.34 |
| Magnesium | < 0.01 | 0.06 | 0.13 |
| Aluminium | < 0.02 | 3.2 | 1.1 |
| Potassium | < 0.5 | < 0.5 | < 0.5 |
| Calcium | < 0.05 | 0.62 | 0.62 |
| Titanium | < 0.005 | 0.25 | 0.14 |
| Vanadium | < 0.005 | < 0.005 | < 0.005 |
| Chromium | < 0.3 | 0.96 | < 0.3 |
| Iron | < 0.04 | 4.1 | 0.55 |
| Cobalt | < 0.05 | < 0.05 | < 0.05 |
| Nickel | < 0.05 | 1.1 | < 0.05 |
| Molybdenum | < 0.05 | 0.08 | < 0.05 |
| Tin | < 0.05 | < 0.05 | < 0.05 |
| Tungsten | < 0.01 | 0.69 | 1.1 |
Measured with GDMS; 5 μm deep into SiC coating
