As semiconductor technology advances, the demand for atomically thin, high performance materials continues to grow. Our single chamber Atomic Layer Deposition (ALD) and High Temperature Annealing system is engineered for up to 8” wafer processing, delivering precise layer growth, defect elimination, and enhanced crystallinity and uniformity, all in one integrated platform.
Our ALD process enables precise, self limiting deposition of 2D materials like MoS₂, MoO₃, WS₂, and WO₃ for next generation transistors, sensors, and flexible electronics.
Post deposition annealing optimises film quality and electronic performance using precise gas controlled environments and sample lifting technology for fast cooling.
Our ALD System is designed to accelerate 2D material integration into next generation semiconductor devices, including high mobility transistors, memory, and optoelectronics.
Power the future of semiconductor technology. Partner with Thermic Edge Ltd for advanced 2D material processing.
| Parameter | Specification |
|---|---|
| Temperature | 1200℃ max substrate temperature |
| Footprint of the frame x 2 frame (two separate frames per system) | 600mm width x 650mm depth x 1400mm height (free standing pump) |
| Vacuum level | ATM to 1x10⁻² mbar base pressure |
| Sample size | 150mm (6”) / 200mm (8”) |
| Substrate holder material | SiC³ Coated Graphite (Ceramic Coatings) |
| Chamber | Full water cooled 316SS |
| Vacuum pump | Chemical Resistant Screw pump |
| Controls | Eurotherm / Mitsubishi PLC |
| Compatibility | O₂, H₂S |
| Purge Gas | N₂ and Ar |
| Precursor Delivery system | 2 heated lines heated to 150℃. Fast Acting ALD Valves and MFC’s |
| Power | 400V Three Phase |
| Substrate Heating | SiC³ Coated Graphite |
| Thermocouples | x3 (one on substrate) |
| Heater uniformity | less than 2% |
| Ramp Rate | 100℃/min |
| Cleanroom capability | Cleanroom 100 |
The Thermic Edge ALD System is designed for Atomic Layer Deposition and High Temperature Annealing in one integrated platform. It supports precise layer growth, defect elimination, enhanced crystallinity, and improved uniformity for semiconductor and 2D material processing.
The system is engineered for up to 8” wafer processing. The technical specifications list sample sizes of 150mm (6”) and 200mm (8”), with SiC³ coated graphite sample holding for 6” or 8” wafers.
The ALD process is described for controlled deposition of 2D materials including MoS₂, MoO₃, WS₂ and WO₃. The page also links these materials to applications such as next generation transistors, sensors, flexible electronics, memory and optoelectronics.
The ALD System content lists reactive and inert gas processing with H₂S, H₂Se, O₂, O₃, N₂ and Ar. The technical specifications also list O₂ and H₂S compatibility, with N₂ and Ar as purge gases.
The substrate holder material is listed as SiC³ coated graphite. Thermic Edge also provides further information on its ceramic coatings.
Useful details may include the required wafer size, substrate temperature, gas compatibility, purge gas requirements, vacuum level, precursor delivery requirements, control preferences, power requirements, and cleanroom requirements. You can contact Thermic Edge through the contact page or email sales@thermic-edge.com.
As the semiconductor technology advances, the demand for atomically thin, high-performance materials continues to grow. Our single-chamber Atomic Layer Deposition (ALD) and High-Temperature Annealing system is engineered for up to 8” wafer processing, delivering precise layer growth, defect elimination, and enhanced crystallinity & uniformity—all in one integrated platform.
Integrated ALD & Advanced Annealing for High-Purity 2D Materials
Step 1: Atomic Layer Deposition (ALD) – Controlled Growth at the Atomic Scale
Our ALD process enables precise, self-limiting deposition of 2D materials like MoS₂, MoO₃, WS₂, and Wo₃ for next-generation transistors, sensors, and flexible electronics.
Step 2: High-Temperature Annealing (Up to 1200°C) – Enhanced Material Properties
Post-deposition annealing optimises film quality and electronic performance using precise gas-controlled environments and sample lifting technology for fast cooling.
Why Semiconductor Manufacturers Choose Our Solution
Single-Chamber ALD & Annealing – Reduces contamination risks and improves efficiency.
High-Temperature Annealing – Up to 1250°C for optimised 2D material properties.
Multi-Gas Compatibility – Enables oxide, sulfide, and nitride processing in a controlled environment.
Wafer-Scale Processing – Supports up to 8” wafers for high-volume semiconductor fabrication.
Advanced Cooling & Handling – Sample lifting & wafer gas cooling for precise temperature control.
Our ALD System is designed to accelerate 2D material integration into next-generation semiconductor devices, including high-mobility transistors, memory, and optoelectronics.
Power the future of semiconductor technology—partner with Thermic Edge Ltd for cutting-edge 2D material processing.
| Temperature | 1200℃ max substrate temperature |
| Footprint of the frame x 2 frame (two separate frames per system) | 600mm width x 650mm depth x 1400mm height (free standing pump). |
| Vacuum level | ATM to 1×10-2mbar base pressure |
| Sample size | 150mm (6”) 200mm (8”) |
| Substrate holder material | SiC3 Coated Graphite |
| Chamber | Full water-cooled 316SS |
| Vacuum pump | Chemical Resistant Screw pump |
| Controls | Eurotherm / Mitsubishi PLC |
| Compatibility | O2, H2S, |
| Purge Gas | N2 and Ar |
| Precursor Delivery system | 2 heated lines heated to 150℃. Fast Acting ALD Valves and MFC’s |
| Power | 400V Three Phase |
| Substrate Heating | SiC3 Coated Graphite. |
| Thermocouples | x3 (one on substrate) |
| Heater uniformity | less than 2%. |
| Ramp Rate | 100℃/min. |
| Cleanroom capability | Cleanroom 100 |
