High-Temperature 2D Materials Atomic Layer Deposition System for Semiconductor Manufacturing.
As the semiconductor technology advances, the demand for atomically thin, high-performance materials continues to grow. Our single-chamber Atomic Layer Deposition (ALD) and High-Temperature Annealing system is engineered for up to 8” wafer processing, delivering precise layer growth, defect elimination, and enhanced crystallinity & uniformity—all in one integrated platform.
Our ALD process enables precise, self-limiting deposition of 2D materials like MoS₂, MoO₃, WS₂, and Wo₃ for next-generation transistors, sensors, and flexible electronics.
Post-deposition annealing optimises film quality and electronic performance using precise gas-controlled environments and sample lifting technology for fast cooling.
Our ALD System is designed to accelerate 2D material integration into next-generation semiconductor devices, including high-mobility transistors, memory, and optoelectronics.
Power the future of semiconductor technology—partner with Thermic Edge Ltd for cutting-edge 2D material processing.
Parameter | Specification |
---|---|
Temperature | 1200℃ max substrate temperature |
Footprint of the frame x 2 frame (two separate frames per system) | 600mm width x 650mm depth x 1400mm height (free standing pump) |
Vacuum level | ATM to 1x10⁻² mbar base pressure |
Sample size | 150mm (6”) / 200mm (8”) |
Substrate holder material | SiC³ Coated Graphite (link to Coatings page) |
Chamber | Full water-cooled 316SS |
Vacuum pump | Chemical Resistant Screw pump |
Controls | Eurotherm / Mitsubishi PLC |
Compatibility | O₂, H₂S, |
Purge Gas | N₂ and Ar |
Precursor Delivery system | 2 heated lines heated to 150℃. Fast Acting ALD Valves and MFC’s |
Power | 400V Three Phase |
Substrate Heating | SiC³ Coated Graphite |
Thermocouples | x3 (one on substrate) |
Heater uniformity | less than 2% |
Ramp Rate | 100℃/min |
Cleanroom capability | Cleanroom 100 |
As the semiconductor technology advances, the demand for atomically thin, high-performance materials continues to grow. Our single-chamber Atomic Layer Deposition (ALD) and High-Temperature Annealing system is engineered for up to 8” wafer processing, delivering precise layer growth, defect elimination, and enhanced crystallinity & uniformity—all in one integrated platform.
Integrated ALD & Advanced Annealing for High-Purity 2D Materials
Step 1: Atomic Layer Deposition (ALD) – Controlled Growth at the Atomic Scale
Our ALD process enables precise, self-limiting deposition of 2D materials like MoS₂, MoO₃, WS₂, and Wo₃ for next-generation transistors, sensors, and flexible electronics.
Step 2: High-Temperature Annealing (Up to 1200°C) – Enhanced Material Properties
Post-deposition annealing optimises film quality and electronic performance using precise gas-controlled environments and sample lifting technology for fast cooling.
Why Semiconductor Manufacturers Choose Our Solution
Single-Chamber ALD & Annealing – Reduces contamination risks and improves efficiency.
High-Temperature Annealing – Up to 1250°C for optimised 2D material properties.
Multi-Gas Compatibility – Enables oxide, sulfide, and nitride processing in a controlled environment.
Wafer-Scale Processing – Supports up to 8” wafers for high-volume semiconductor fabrication.
Advanced Cooling & Handling – Sample lifting & wafer gas cooling for precise temperature control.
Our ALD System is designed to accelerate 2D material integration into next-generation semiconductor devices, including high-mobility transistors, memory, and optoelectronics.
Power the future of semiconductor technology—partner with Thermic Edge Ltd for cutting-edge 2D material processing.
Temperature | 1200℃ max substrate temperature |
Footprint of the frame x 2 frame (two separate frames per system) | 600mm width x 650mm depth x 1400mm height (free standing pump). |
Vacuum level | ATM to 1×10-2mbar base pressure |
Sample size | 150mm (6”) 200mm (8”) |
Substrate holder material | SiC3 Coated Graphite |
Chamber | Full water-cooled 316SS |
Vacuum pump | Chemical Resistant Screw pump |
Controls | Eurotherm / Mitsubishi PLC |
Compatibility | O2, H2S, |
Purge Gas | N2 and Ar |
Precursor Delivery system | 2 heated lines heated to 150℃. Fast Acting ALD Valves and MFC’s |
Power | 400V Three Phase |
Substrate Heating | SiC3 Coated Graphite. |
Thermocouples | x3 (one on substrate) |
Heater uniformity | less than 2%. |
Ramp Rate | 100℃/min. |
Cleanroom capability | Cleanroom 100 |
To be a beacon of innovation and excellence, inspiring positive change and leaving a lasting impact on our industry and the environment
Thermic Edge Limited are committed to lead the industry in delivering innovative, high-quality high-temperature applications, backed by unparalleled customer service.
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