ALD Systems

ALD System Overview

As the semiconductor technology advances, the demand for atomically thin, high-performance materials continues to grow. Our single-chamber Atomic Layer Deposition (ALD) and High-Temperature Annealing system is engineered for up to 8” wafer processing, delivering precise layer growth, defect elimination, and enhanced crystallinity & uniformity—all in one integrated platform.

1. Shower Head gas inlet with single gas input with heated line.
2. SiC³ coated graphite sample holding for 6” or 8” wafers.
3. Gas cooling ring.
4. Sample lifting mechanism.
5. SiC³ coated graphite heating element.
6. 2 x Type K Thermocouples monitoring element temperature.
7. 1 x K type thermocouple monitoring wafer temperature.

Step 1: Atomic Layer Deposition (ALD) – Controlled Growth at the Atomic Scale

Our ALD process enables precise, self-limiting deposition of 2D materials like MoS₂, MoO₃, WS₂, and Wo₃ for next-generation transistors, sensors, and flexible electronics.

• Scalable for up to 8” Wafers – Enables uniform deposition over large-area substrates.
• Superior Step Coverage – Achieves monolayer precision on high-aspect-ratio structures.
• Low-Temperature Processing – Ensures compatibility with advanced semiconductor materials.
• Showerhead gas delivery system – allowing for uniform gas distribution.

Step 2: High-Temperature Annealing (Up to 1200°C) – Enhanced Material Properties

Post-deposition annealing optimises film quality and electronic performance using precise gas-controlled environments and sample lifting technology for fast cooling.

• High Temperatures (Up to 1200°C) – Promotes crystallinity and phase transformation.
• Reactive & Inert Gas Processing – H₂S, H₂Se, O₂, O₃, N₂, and Ar.
• Wafer Gas Cooling & Sample Lifting – Ensures uniform thermal management and rapid cooldown for process stability.

Why Semiconductor Manufacturers Choose Our Solution

• Single-Chamber ALD & Annealing – Reduces contamination risks and improves efficiency.
• High-Temperature Annealing – Up to 1250°C for optimised 2D material properties.
• Multi-Gas Compatibility – Enables oxide, sulfide, and nitride processing in a controlled environment.
• Wafer-Scale Processing – Supports up to 8” wafers for high-volume semiconductor fabrication.
• Advanced Cooling & Handling – Sample lifting & wafer gas cooling for precise temperature control.

Our ALD System is designed to accelerate 2D material integration into next-generation semiconductor devices, including high-mobility transistors, memory, and optoelectronics.

Power the future of semiconductor technology—partner with Thermic Edge Ltd for cutting-edge 2D material processing.