Experts in Substrate Heating

ALD Systems

High-Temperature 2D Materials Atomic Layer Deposition System for Semiconductor Manufacturing.

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ALD System Overview

As the semiconductor technology advances, the demand for atomically thin, high-performance materials continues to grow. Our single-chamber Atomic Layer Deposition (ALD) and High-Temperature Annealing system is engineered for up to 8” wafer processing, delivering precise layer growth, defect elimination, and enhanced crystallinity & uniformity—all in one integrated platform.

Integrated Platform
  1. Shower Head gas inlet with single gas input with heated line.
  2. SiC³ coated graphite sample holding for 6” or 8” wafers.
  3. Gas cooling ring.
  4. SiC³ coated graphite heating element.
  5. Sample lifting mechanism.
  6. 2 x Type K Thermocouples monitoring element temperature.
  7. 1 x K type thermocouple monitoring wafer temperature.

Step 1: Atomic Layer Deposition (ALD) – Controlled Growth at the Atomic Scale


Our ALD process enables precise, self-limiting deposition of 2D materials like MoS₂, MoO₃, WS₂, and Wo₃ for next-generation transistors, sensors, and flexible electronics.

  • Scalable for up to 8” Wafers – Enables uniform deposition over large-area substrates.
  • Superior Step Coverage – Achieves monolayer precision on high-aspect-ratio structures.
  • Low-Temperature Processing – Ensures compatibility with advanced semiconductor materials.
  • Showerhead gas delivery system – allowing for uniform gas distribution.

Step 2: High-Temperature Annealing (Up to 1200°C) – Enhanced Material Properties


Post-deposition annealing optimises film quality and electronic performance using precise gas-controlled environments and sample lifting technology for fast cooling.

  • High Temperatures (Up to 1200°C) – Promotes crystallinity and phase transformation.
  • Reactive & Inert Gas Processing – H₂S, H₂Se, O₂, O₃, N₂, and Ar.
  • Wafer Gas Cooling & Sample Lifting – Ensures uniform thermal management and rapid cooldown for process stability.

Why Semiconductor Manufacturers Choose Our Solution


  • Single-Chamber ALD & Annealing – Reduces contamination risks and improves efficiency.
  • High-Temperature Annealing – Up to 1250°C for optimised 2D material properties.
  • Multi-Gas Compatibility – Enables oxide, sulfide, and nitride processing in a controlled environment.
  • Wafer-Scale Processing – Supports up to 8” wafers for high-volume semiconductor fabrication.
  • Advanced Cooling & Handling – Sample lifting & wafer gas cooling for precise temperature control.


Our ALD System is designed to accelerate 2D material integration into next-generation semiconductor devices, including high-mobility transistors, memory, and optoelectronics.


Power the future of semiconductor technology—partner with Thermic Edge Ltd for cutting-edge 2D material processing.

Technical Specifications

Parameter Specification
Temperature 1200℃ max substrate temperature
Footprint of the frame x 2 frame (two separate frames per system) 600mm width x 650mm depth x 1400mm height (free standing pump)
Vacuum level ATM to 1x10⁻² mbar base pressure
Sample size 150mm (6”) / 200mm (8”)
Substrate holder material SiC³ Coated Graphite (link to Coatings page)
Chamber Full water-cooled 316SS
Vacuum pump Chemical Resistant Screw pump
Controls Eurotherm / Mitsubishi PLC
Compatibility O₂, H₂S,
Purge Gas N₂ and Ar
Precursor Delivery system 2 heated lines heated to 150℃. Fast Acting ALD Valves and MFC’s
Power 400V Three Phase
Substrate Heating SiC³ Coated Graphite
Thermocouples x3 (one on substrate)
Heater uniformity less than 2%
Ramp Rate 100℃/min
Cleanroom capability Cleanroom 100

Request a Quote

If you have selected 'Exhibition or Event', please add where it was held in the message box below.

ALD System Overview

As the semiconductor technology advances, the demand for atomically thin, high-performance materials continues to grow. Our single-chamber Atomic Layer Deposition (ALD) and High-Temperature Annealing system is engineered for up to 8” wafer processing, delivering precise layer growth, defect elimination, and enhanced crystallinity & uniformity—all in one integrated platform.

Subtitle
  1. Shower Head gas inlet with single gas input with heated line.
  2. SiC³ coated graphite sample holding for 6” or 8” wafers.
  3. Gas cooling ring.
  4. SiC³ coated graphite heating element.
  5. Sample lifting mechanism.
  6. 2 x Type K Thermocouples monitoring element temperature.
  7. 1 x K type thermocouple monitoring wafer temperature.

Integrated ALD & Advanced Annealing for High-Purity 2D Materials

Step 1: Atomic Layer Deposition (ALD) – Controlled Growth at the Atomic Scale

Our ALD process enables precise, self-limiting deposition of 2D materials like MoS₂, MoO₃, WS₂, and Wo₃ for next-generation transistors, sensors, and flexible electronics.

  • Scalable for up to 8” Wafers – Enables uniform deposition over large-area substrates.
  • Superior Step Coverage – Achieves monolayer precision on high-aspect-ratio structures.
  • Low-Temperature Processing – Ensures compatibility with advanced semiconductor materials.
  • Showerhead gas delivery system – allowing for uniform gas distribution.
 

Step 2: High-Temperature Annealing (Up to 1200°C) – Enhanced Material Properties

Post-deposition annealing optimises film quality and electronic performance using precise gas-controlled environments and sample lifting technology for fast cooling.

  • High Temperatures (Up to 1200°C) – Promotes crystallinity and phase transformation.
  • Reactive & Inert Gas Processing – H₂S, H₂Se, O₂, O₃, N₂, and Ar.
  • Wafer Gas Cooling & Sample Lifting – Ensures uniform thermal management and rapid cooldown for process stability.
 

Why Semiconductor Manufacturers Choose Our Solution

Single-Chamber ALD & Annealing – Reduces contamination risks and improves efficiency.

High-Temperature Annealing – Up to 1250°C for optimised 2D material properties.

Multi-Gas Compatibility – Enables oxide, sulfide, and nitride processing in a controlled environment.

Wafer-Scale ProcessingSupports up to 8” wafers for high-volume semiconductor fabrication.

Advanced Cooling & HandlingSample lifting & wafer gas cooling for precise temperature control.

Our ALD System is designed to accelerate 2D material integration into next-generation semiconductor devices, including high-mobility transistors, memory, and optoelectronics.

Power the future of semiconductor technology—partner with Thermic Edge Ltd for cutting-edge 2D material processing.

ALD Systems Image
ALD System Second Close Up
ALD Systems close up

Request a Quote

If you have selected 'Exhibition or Event', please add where it was held in the message box below.

Technical Specifications

Temperature 1200℃ max substrate temperature
Footprint of the frame x 2 frame (two separate frames per system) 600mm width x 650mm depth x 1400mm height (free standing pump).
Vacuum level ATM to 1×10-2mbar base pressure
Sample size 150mm (6”) 200mm (8”)
Substrate holder material SiC3 Coated Graphite
Chamber Full water-cooled 316SS
Vacuum pump Chemical Resistant Screw pump
Controls Eurotherm / Mitsubishi PLC
Compatibility O2, H2S,
Purge Gas N2 and Ar
Precursor Delivery system 2 heated lines heated to 150℃. Fast Acting ALD Valves and MFC’s
Power 400V Three Phase
Substrate Heating SiC3 Coated Graphite.
Thermocouples x3 (one on substrate)
Heater uniformity less than 2%.
Ramp Rate 100℃/min.
Cleanroom capability Cleanroom 100

Request a Quote

If you have selected 'Exhibition or Event', please add where it was held in the message box below.

Image Gallery

ALD Systems Image
ALD System Second Close Up
ALD Systems close up