In many high-precision applications, controlled heating processes are crucial. Wafer heating and crucible heating are two such methods, which are both necessary for getting the desired results in case of some specific contexts.
Wafer heating is the process of heating a substrate holder which in turn heats a wafer with high levels of uniformity. This is especially important in thin film deposition like CVD, PVD or ALD where reactions take place on the surface of the wafer with very specific requirements. This type of heating is referred to as Rapid Thermal Processing (RTP). Uniformities across the wafer of +/- 1% can make a big difference in the structure and thickness of the films so it is important to have uniform heating which is rapid and then a slow cooling to prevent warpage and discolouration due to thermal shock.
Crucible heating is the process of heating either powders or small dia materials inside a cylindrical holder. They are usually fabricated from either ceramic, graphite or inert materials so they do not react with the materials placed inside. Primarily used for sintering which is the process of heating a material to below melting point to create a solid mass. Another use would be annealing materials to increase ductility and also improve electrical conductivity which is greatly important for materials in the semiconductor and electronics industry.
Contact us for more information on our heating and furnace ranges by visiting the Contact page.
