A high-performance Chemical Vapor Deposition system designed to apply our unique SiC₃ cubic silicon carbide coatings.
Thermic Edge Ltd proudly introduces the SiC3 CVD Reactor, an advanced Hot Wall Chemical Vapor Deposition system purpose-built to deliver our unique SiC3 cubic silicon carbide coatings on an industrial scale. Developed exclusively by Thermic Edge, SiC3 combines a well-defined crystal structure, isotropic growth, and high-density layering—pushing the boundaries of material protection and purity for critical applications.
The SiC3 CVD Reactor has been specifically engineered to support high-volume production environments, making it ideally suited for the semiconductor industry, where throughput, repeatability, and contamination control are paramount. Designed with robust thermal uniformity, optimized gas flow dynamics, and precision process control, the reactor ensures consistent, high-purity coatings across large batches of parts with minimal variation.
Whether you're coating complex graphite substrates, porous ceramics, or composite components, the SiC3 reactor enables cost-effective, high-yield manufacturing without compromising on quality or performance. Combined with Thermic Edge's proven expertise in component preparation and post-processing, the system delivers an integrated, scalable solution for next-generation device fabrication and critical process hardware.
With over a decade of continuous operation of our own SiC3 CVD reactor, Thermic Edge brings unparalleled hands-on expertise to the design, optimization, and maintenance of CVD systems. This practical experience has directly informed the development of the SiC3 reactor—ensuring reliability, ease of use, and performance that meet real-world production demands. Our deep process knowledge enables us to support customers beyond installation, offering insights into coating recipes, system tuning, and long-term maintenance strategies.
| Parameter | Specification |
|---|---|
| Reactor Type | Hot Wall, Vertical CVD Reactor |
| Process Chambers | Single or Dual Process Chambers (configurable per production requirements) |
| Heating Method | Resistive Heating or Induction Heating options available depending on application and power limitations at site of installation |
| Chamber Wall Material | 316L Stainless Steel |
| Coating Material | Cubic Silicon Carbide (β-SiC) |
| Deposition Process | LPCVD or Atmospheric CVD (customizable) |
| Typical Coating Thickness | 80–100 µm (variable up to 200 µm upon request) |
| Thickness Uniformity | ±10 µm on 100 µm layer (targeting ±5 µm in development) |
| Growth Rate | 50–60 µm per hour |
| Surface Roughness | Adjustable (Ra tailored to application requirements) |
| Coating Purity | Ultra-high purity; low nitrogen absorption; nitrogen-free option available |
| Substrate Types | Graphite, Porous Ceramics, Composites |
| Geometry Capability | High conformity on complex 3D shapes and blind holes (Ø1mm × 5mm) |
| Chamber Size (Processing Zone) | Ø300 mm × 450 mm height, Ø1000mm x 1500mm, Ø1500mm x 2000mm |
| Rotational Base | Included for maximised uniformity of deposition |
| Loading Mechanism | Motorised chamber lift system for vertical loading |
| Max Substrate Temperature | Up to 1400 °C (depending on process and materials) |
| Process Gases | SiCl₄, CH₄, H₂, Ar (with high-purity MFC-controlled delivery and mixing via Coriolis before distribution to reactor) |
| Carrier Gas Control | Multi-zone gas injection with precision MFC regulation |
| Automation & Interface | PLC-based control; optional SECS/GEM automation interface |
| Process Repeatability | <2% variation across batch under standardised conditions |
| System Footprint | Modular; optimized for cleanroom integration and scalability |
This table shows the impurities of SiC³ coating.
Lowest limit of detection with this method. Testing carried out by EAG Laboratories using Glow Discharge Mass Spectroscopy.
| Property | Value |
|---|---|
| Density | 3200 kg/m3 |
| Crystal Structure | 3C (cubic; β) |
| Porosity | 0% (helium leak tight) |
| Crystal Size | 1 – 5 μm |
| Appearance | Grey, satin to dull |
| Thermal Expansion (RT–400°C) | 4.2 x 10-6 m/K |
| Thermal Conductivity (@ 20°C) | 200 W/m·K |
| Elastic Modulus | 450 GPa |
| Electrical Resistivity (@ 20°C) | 1 MΩ·m |
| Element | TEC | C1 | C2 |
|---|---|---|---|
| Sodium | < 0.01 | 0.31 | 0.34 |
| Magnesium | < 0.01 | 0.06 | 0.13 |
| Aluminium | < 0.02 | 3.2 | 1.1 |
| Potassium | < 0.5 | < 0.5 | < 0.5 |
| Calcium | < 0.05 | 0.62 | 0.62 |
| Titanium | < 0.005 | 0.25 | 0.14 |
| Vanadium | < 0.005 | < 0.005 | < 0.005 |
| Chromium | < 0.3 | 0.96 | < 0.3 |
| Iron | < 0.04 | 4.1 | 0.55 |
| Cobalt | < 0.05 | < 0.05 | < 0.05 |
| Nickel | < 0.05 | 1.1 | < 0.05 |
| Molybdenum | < 0.05 | 0.08 | < 0.05 |
| Tin | < 0.05 | < 0.05 | < 0.05 |
| Tungsten | < 0.01 | 0.69 | 1.1 |
Measured with GDMS; 5 μm deep into SiC coating
Thermic Edge Ltd proudly introduces the SiC3 CVD Reactor, an advanced Chemical Vapor Deposition system purpose-built to deliver our unique SiC3 cubic silicon carbide coatings. Developed exclusively by Thermic Edge, SiC3 combines a well-defined crystal structure, isotropic growth, and high-density layering—pushing the boundaries of material protection and purity for critical applications.
Key Features
| Parameter | Specification |
|---|---|
| Reactor Type | Hot Wall, Vertical CVD Reactor |
| Process Chambers | Single or Dual Process Chambers (configurable per production requirements) |
| Heating Method | Resistive Heating or Induction Heating options available depending on application and power limitations at site of installation |
| Chamber Wall Material | 316L Stainless Steel |
| Coating Material | Cubic Silicon Carbide (β-SiC) |
| Deposition Process | LPCVD or Atmospheric CVD (customizable) |
| Typical Coating Thickness | 80–100 µm (variable up to 200 µm upon request) |
| Thickness Uniformity | ±10 µm on 100 µm layer (targeting ±5 µm in development) |
| Growth Rate | 50–60 µm per hour |
| Surface Roughness | Adjustable (Ra tailored to application requirements) |
| Coating Purity | Ultra-high purity; low nitrogen absorption; nitrogen-free option available |
| Substrate Types | Graphite, Porous Ceramics, Composites |
| Geometry Capability | High conformity on complex 3D shapes and blind holes (Ø1mm × 5mm) |
| Chamber Size (Processing Zone) | Ø300 mm × 450 mm height, Ø1000mm x 1500mm, Ø1500mm x 2000mm |
| Rotational Base | Included for maximised uniformity of deposition |
| Loading Mechanism | Motorised chamber lift system for vertical loading |
| Max Substrate Temperature | Up to 1400 °C (depending on process and materials) |
| Process Gases | SiCl₄, CH₄, H₂, Ar (with high-purity MFC-controlled delivery and mixing via Coriolis before distribution to reactor) |
| Carrier Gas Control | Multi-zone gas injection with precision MFC regulation |
| Automation & Interface | PLC-based control; optional SECS/GEM automation interface |
| Process Repeatability | <2% variation across batch under standardised conditions |
| System Footprint | Modular; optimized for cleanroom integration and scalability |
This table shows the impurities of SiC³ coating.
Lowest limit of detection with this method. Testing carried out by EAG Laboratories using Glow Discharge Mass Spectroscopy.
| Property | Value |
|---|---|
| Density | 3200 kg/m3 |
| Crystal Structure | 3C (cubic; β) |
| Porosity | 0% (helium leak tight) |
| Crystal Size | 1 – 5 μm |
| Appearance | Grey, satin to dull |
| Thermal Expansion (RT–400°C) | 4.2 x 10-6 m/K |
| Thermal Conductivity (@ 20°C) | 200 W/m·K |
| Elastic Modulus | 450 GPa |
| Electrical Resistivity (@ 20°C) | 1 MΩ·m |
| Element | TEC | C1 | C2 |
|---|---|---|---|
| Sodium | < 0.01 | 0.31 | 0.34 |
| Magnesium | < 0.01 | 0.06 | 0.13 |
| Aluminium | < 0.02 | 3.2 | 1.1 |
| Potassium | < 0.5 | < 0.5 | < 0.5 |
| Calcium | < 0.05 | 0.62 | 0.62 |
| Titanium | < 0.005 | 0.25 | 0.14 |
| Vanadium | < 0.005 | < 0.005 | < 0.005 |
| Chromium | < 0.3 | 0.96 | < 0.3 |
| Iron | < 0.04 | 4.1 | 0.55 |
| Cobalt | < 0.05 | < 0.05 | < 0.05 |
| Nickel | < 0.05 | 1.1 | < 0.05 |
| Molybdenum | < 0.05 | 0.08 | < 0.05 |
| Tin | < 0.05 | < 0.05 | < 0.05 |
| Tungsten | < 0.01 | 0.69 | 1.1 |
Measured with GDMS; 5 μm deep into SiC coating
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Thermic Edge Limited are committed to lead the industry in delivering innovative, high-quality high-temperature applications, backed by unparalleled customer service.
