Enhancing Surface Modification with RF Plasma in Heater Stages

RF Plasma

How RF Plasma Enhances Surface Modification in Semiconductor Applications

Thermic Edge provides the option to integrate RF Bias into any Heater Stage or Sample Heater. When an RF electric field is applied to a Sample Heater top plate within a Vacuum Furnace, it causes the electrons in the chamber’s gas to move, colliding with the top plate. This interaction results in a buildup of a negative DC field. Typically, this field operates at a frequency of 13.56 MHz with a power level of approximately 300 Watts.

The oscillating electric field ionizes gas molecules by removing electrons, creating plasma within the chamber. In the semiconductor industry, RF Plasma is utilized for cleaning, surface modification, or etching. The plasma interacts directly with a substrate, positioned on the Sample Heater or Heater Stage, playing an essential role in processes like plasma etching and Metal-Organic Chemical Vapor Deposition (MoCVD).

Why RF Plasma is Essential for Precision Etching and Cleaning

Using RF plasma in these systems prepares surfaces for the application of other materials. Surface modification enhances adhesion between different materials, achieved through a combination of contaminant cleaning, surface finishing to suit bonding characteristics, or by increasing the surface energy of the materials.

The etching or cleaning process occurs as free electrons in the plasma field accelerate in multiple directions. Since the wafer and substrate holder are electrically isolated, a negative charge builds up as electrons are removed from the substrate holder. With the plasma itself having a positive charge, this voltage difference causes positive ions in the plasma to collide with the samples as they move toward the negative field on the substrate holder.

These collisions result in material sputtering, where atoms are effectively knocked off the substrate’s surface, enabling precise, atomic-level surface modification. 

Benefits of High Purity Silicon Carbide (SiC) Coating in Plasma Processing

To further support industrial and research advancements in MoCVD film development, Thermic Edge has introduced a High Purity Silicon Carbide (SiC) Coating. This ultra-high purity SiC coating offers exceptional corrosion resistance, reducing risks of gas desorption from carbon surfaces and minimizing dust and impurities in final products.

Contact us

To learn more about how our RF plasma capabilities can be applied to your substrate heating needs, contact us and a member of our team will be pleased to provide solutions tailored to your technical requirements.

You might also enjoy

Cubic Silicon Carbide Coating
Thermic Edge Coatings: Ten Years of Independent Ceramic Coatings Expertise

Founded in 2016, Thermic Edge Coatings celebrates ten years as a specialist and independent provider of high purity ceramic coatings for high temperature and vacuum applications.

Thermic Edge Coatings operates as part of the Thermic Edge Group, which includes Thermic Edge, Thermic Edge Ceramics and Graphite, and Thermic Edge Europe.

SiC Coating
SiC vs. SiC3: The Next Generation of High-Purity Coatings

Silicon Carbide (SiC) has long been the gold standard for protective SiC coatings in high-temperature, corrosive environments. Its exceptional hardness and thermal properties make it invaluable in industries ranging from aerospace to semiconductor manufacturing. However, for the most demanding applications, especially those requiring ultra-high purity, standard SiC coatings often fall short. Enter Cubic Silicon Carbide (SiC3).

Silicon Carbide
What is Silicon Carbide Used For?

Silicon carbide (SiC) is a compound of silicon and carbon that has gained widespread attention across high-performance engineering, materials science, and vacuum technology. Known for its exceptional thermal conductivity, chemical inertness, and mechanical strength, silicon carbide has proven invaluable in environments where conventional ceramics or metals would fail.