How RF Plasma Enhances Surface Modification in Semiconductor Applications
Thermic Edge provides the option to integrate RF Bias into any Heater Stage or Sample Heater. When an RF electric field is applied to a Sample Heater top plate within a Vacuum Furnace, it causes the electrons in the chamber’s gas to move, colliding with the top plate. This interaction results in a buildup of a negative DC field. Typically, this field operates at a frequency of 13.56 MHz with a power level of approximately 300 Watts.
The oscillating electric field ionizes gas molecules by removing electrons, creating plasma within the chamber. In the semiconductor industry, RF Plasma is utilized for cleaning, surface modification, or etching. The plasma interacts directly with a substrate, positioned on the Sample Heater or Heater Stage, playing an essential role in processes like plasma etching and Metal-Organic Chemical Vapor Deposition (MoCVD).
Why RF Plasma is Essential for Precision Etching and Cleaning
Using RF plasma in these systems prepares surfaces for the application of other materials. Surface modification enhances adhesion between different materials, achieved through a combination of contaminant cleaning, surface finishing to suit bonding characteristics, or by increasing the surface energy of the materials.
The etching or cleaning process occurs as free electrons in the plasma field accelerate in multiple directions. Since the wafer and substrate holder are electrically isolated, a negative charge builds up as electrons are removed from the substrate holder. With the plasma itself having a positive charge, this voltage difference causes positive ions in the plasma to collide with the samples as they move toward the negative field on the substrate holder.
These collisions result in material sputtering, where atoms are effectively knocked off the substrate’s surface, enabling precise, atomic-level surface modification.
Benefits of High Purity Silicon Carbide (SiC) Coating in Plasma Processing
To further support industrial and research advancements in MoCVD film development, Thermic Edge has introduced a High Purity Silicon Carbide (SiC) Coating. This ultra-high purity SiC coating offers exceptional corrosion resistance, reducing risks of gas desorption from carbon surfaces and minimizing dust and impurities in final products.
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To learn more about how our RF plasma capabilities can be applied to your substrate heating needs, contact us and a member of our team will be pleased to provide solutions tailored to your technical requirements.